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| SMD Type Low Frequency Transistor 2SC4115 Transistors Features Low VCE(sat):VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=10ms Symbol VCBO VCEO VEBO IC ICP *1 PC TJ Tstg Rating 40 20 6 3 5 0.3 150 -55 to 150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter outoff current Collector emitter saturation voltage DC current gain Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE Cob fT IC=50iA IC=1mA IE=50iA VCB=30V VEB=5V IC/IB=2A/0.1A VCE=2V,IC=0.1A VCB=10V,IE=0A,f=1MHz VCE=2V.IE=0.5A,f=100MHz 120 25 290 0.2 Testconditons Min 40 20 6 0.1 0.1 0.5 560 pF MHz Typ Max Unit V V V A A V hFE Classification Rank hFE 120 Q 270 180 R 390 270 S 560 www.kexin.com.cn 1 |
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